Failure details:
Fieled failure of DRV3201QPAPRQ1 was found and FA analysis was conducted. FA team drew a conclusion of EOS.
Nothing abnormal was observed by External Package Examination,X-Ray Analysis,Scanning Acoustic Microscopy (SAM).
During Electrical Characterization,Curve trace analysis was performed on the returned unit. Short failure was verified at pin4 (SHS3) vs.pin5(GHS3).
Failure Isolation:External Induce Voltage Alteration (XIVA) was performed on the returned unit when biasing pin4 vs pin5 0.1V@100mA. One hot spot was observed.
- De-capsulation and Internal Optical Inspection:The returned unit was chemically de-capsulated. Electrically Induced Physical Damage (EIPD) was observed on hotspot area beside pin4.
- FA Observation:
Short failure was verified at pin4 (SHS3) vs. pin5(GHS3).
One hot spot was observed beside pin4 by XIVA isolation.
Electrically Induced Physical Damage (EIPD) was observed on hotspot area beside pin4.
Here is customer`s additional questions:
1.According to customer`s schematic, there is 1 MOSFET before PIN4 of DRV3201QPAPRQ1, however it still present ok. Customer has no idea about why motor-surge didn't destroy the MOSFET but Driver IC?
can you provide EIPD path of the external or internal?
2.How does TI exclud the reason of some kind of defect in the MOS part of SCH3 (4pin)？
3.Can EDX be done at EIPD area to see if particle exist？
