DRV8962: Preventing shoot through in HBridge --> EN ?

Hi, 

regarding the INx to OUTx dealy time, from HIGH to LOW and viceversa, is the 600ns internal tipical delay suitable , in order to prevent the shoot through fo the Mosfet?

How is it possible to increase the fast-recycle time (with only diodes between commutations) of the half bridges, for a time between 600ns and 2us?

I suppose that below 2us the enabling signal does not seem usable, having a typical propagation time of 2us.

In a similar design, with discrete MOSFETs however, I need at least 800 ns to avoid current shoot through, and more delay leads to greater losses.

Best regards
Marcello