Part Number: DRV8350
We are checking the operation of the DRV8350.
The DRVV8350 is used in a 3-phase bridge circuit.
We found that the voltage between GHX and SHX was -2V (50 nanoseconds), exceeding the maximum rated voltage.
The above voltage is generated at the moment when the bottom FET is turned off when the motor current is negative.
Reproduced in circuit simulation.
In relation to charging the capacitance between the gate and drain of the FET, I think that the voltage between GHX and SHX will momentarily become negative in the type of gate driver with an external gate resistor, but the voltage between GHX and SHXIs it possible to meet the standard of -0.3V or more?
And why is it not acceptable if the voltage across GHX-SHX is less than -0.3V?
