Hi,
I'm using a DRV8300DI gate driver for a motor control application and there seems to be significant ringing at larger currents and the rise time is extremly fast.
The layout is done according best practice for motor control, reducing inductance as much as possible etc., so there should not be too much issues there. I think the gate driver resistor is way too low (22Ohm),
but from my experience 22Ohm is for a 48VDC application already pretty high, right? I want to reach get around 100ns rise time, but at the moment I have more like 15ns and thight might be the reason for ringing.
The MOSFET is the following with a capacitance Qgd of 9.1nC: https://www.infineon.com/dgdl/Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
So, how should I choose my Rgate? Tau = R*Q/U = 22Ohm * 9.1nF / 12VDC = 16.7ns (12V Gate Drive Voltage), so is my time constant way to short right? But it seems from the EVAL Board with the DRV8300, there are way lower gate resistors for a MOSFET with nearly the same gate charge.
Ringing @ 10A (Blue is current with 100mV/A) (SHA):
Ringing @ 20A (SHA):
Ringing @ 30A (current probe saturates at 20A) (SHA):
GHA before the gate resistor @ 20A:
GHA after the gate resistor @ 20A:
