Hello
I'm designing a BLDC drive unit following the design material of the TI dev board DRV8328AEVM. I've already bought the gate driver DRV8328 and ideally I would have bought the same Mosfet devices of the TI dev board (CSD18536KTTT) but it's out of stock and unfortunately I couldn't find an available device from TI. However, I think I've found a suitable device from onsemi. The ratings are similar to the CSD18536KTTT but some parameters are different. For the CSD18536KTTT, the gate-source threshold voltage, gate charge and gate-drain charge are 2.2V, 108nC and 14nC respectively while for the onsemi device the values are 4V, 45nC and 7nC. So basically the device I'm choosing has got higher gate-source threshold voltage (4V instead of 2.2V) but lower gate charge (45nC instead of 108nC). Do you think it can still be controlled with the gate driver DRV8328? What external gate resistance value should I choose? I know that the selection of external gate resistance is an iterative process but based on the Mosfet and gate driver devices chosen is it possible to select a good staring value?
thanks
Giorgio
