Part Number: DRV8343-Q1
Hi team,
In 71 page of DRV8343-Q1 datasheet, there are equations for MOSFET capacity. (9.2.1.2.1 External MOSFET Support)
Trapezoidal 120 degree commutation: IVCP > Qg * fpwm -(6)
Sinusoidal 180 degree commutation IVCP > 3 * Qg * fpwm -(7)
However, the following section that is 9.2.1.2.1.1 Example is different from this equation.
There are two values, IVCP=15mA, fpwm=10kHz. These values apply (6) and (7). The Qg is less than 1500nC for (6) and 500nC for (7). However, in the datasheet, Qg is less than 750nC for trapezoidal and 250nC for sinusoidal.
Could you tell me which is correct calculation for DRV8343-Q1?
Regards,
Nishimura
