Dear Sir,
1. Suppose I add a RC filter on ISEN pin to filter the R-sense noise.
My question is that: when low side gate drive turn off the low side MOS, there is a large current from the low side MOS-gate. Does the large current flow directly to GND or flow to ISEN and then then R of the RC filter and then finally go through the R-sense to GND(affect the ISEN voltage detection)?
2.Recently I used drv8307 to drive a large size power MOSFET (Infineon IPB011N04L 40V 1.1mOhm 180A ,gate charge max 180nC)
,it failed. It failed perhaps at the low driven current ability -30mA.(lots of PWM pulse were lost and the motor run unstable at fixed PWM duty, for example 50% duty).
Because my PCB is already completed (we have received the sample from factory). Now I decide to use drv8308(130mA) to drive the Infineon IPB011N04L(gate charge max 180nC) .will it be successful to drive the large capacity power MSFET if I ignore the switching loss( due to the slow ramp-up/down voltage)?
Jiang, Xiu Taiwan







