DRV8353: Question regarding VM and Dual Supply architecture

Tool/software:

Hello:

I have a doubt regarding using the DRV8353S 3SR in dual supply mode. I am controlling a BLDC motor at 29.2V in single supply mode, and was hoping to change to dual supply mode and have Vm be 12V. However, in section 8.3.1.3 of the datasheet there is some verbiage related to Vm that I do not quite understand (in bold in the quote below):

"The high-side gate-drive voltage supply is created using a doubler charge pump that operates from the VM and VDRAIN voltage supply inputs. The charge pump allows the gate driver to correctly bias the high-side MOSFET gate with respect to the source across a wide input supply voltage range. The charge pump is regulated to keep a fixed output voltage of VVDRAIN + 10.5 V and supports an average output current of 25 mA. When VVM is less than 12 V, the charge pump operates in full doubler mode and generates VVCP = 2 × VVM – 1.5 V with respect to VVDRAIN when unloaded. The charge pump is continuously monitored for undervoltage to prevent under-driven MOSFET conditions."

Would this mean that when powered with ~12V the voltage to drive the high level gates is Vdrain + 22.5V? And if Vm = Vdrain, then the voltage to drive the high level gates is Vdrain + 10.5? So with lower voltages the gates are driven with a higher voltage? Or am I misunderstanding this sentence?

We are using mosfets with a maximum Vgs voltage of +/- 20V. So this increment could put us over the recommended edge.

Thank you.